Fonction
Chercheur au Commissariat à l’Énergie Atomique et aux Énergies Alternatives CEA
Sujets de recherche
Domaines
- Propriétés opto-électroniques des matériaux et dispositifs à base de semi-conducteurs nitrures
- Localisation des ondes dans les milieux désordonnés
Techniques expérimentales
- LEEM/PEEM/EEM – Low Energy Electron Microscopy, PhotoEmission Electron Microscopy, ElectroEmission Microscopy
- STL – Scanning Tunneling electroLuminescence
- Spectroscopie et microscopie d’absorption transitoire
CV
2023 –
Chercheur CEA
2023
Post-doctorat, Cavendish Laboratory, Université de Cambridge, UK, équipe d’Akshay Rao
2019 – 2022
Thèse de doctorat, Laboratoire de Physique de la Matière Condensée (PMC), École polytechnique, Direction Jacques Peretti et Claude Weisbuch
« Study of the impact of alloy disorder on the electronic and optical properties of nitride semiconductor compounds and of their heterostructures ».
2016 – 2019
Master ICFP, Matière Condensée, ENS Paris
- Stage M1 (6 mois), LBNL, Berkeley, USA, encadrement Andreas Schmid
- Stage M2 (4 mois), PMC, École polytechnique, encadrement Jacques Peretti
2017 – 2018
Agrégation de Physique-Chimie option Physique, rang 3/72
2015 – 2016
Licence de Physique Fondamentale, ENS Paris
2015
Admission à l’École Normale Supérieure (ENS), Paris, fonctionnaire-stagiaire
Publications scientifiques
[8] Observation of quasibound states in open quantum wells of cesiated 𝑝-doped GaN surfaces, M. Sauty et al., Phys. Rev. B 113, L081301 (2026)
[7] Molecular Engineering of Interlayer Exciton Delocalization in 2D Perovskites, Y. Boeije, F. Lie, M. Dubajić, E. Garip, A. Maufort, R.-I. Biega, S. Lenaers, M. Sauty et al., J. Am. Chem. Soc. 147 (35), 31541-31557 (2025)
[6] Investigation of the cesium activation of GaN photocathodes by low-energy
electron microscopy, M. Sauty et al., Phys. Rev. Applied 22, 034005 (2024)
[5] Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy, T. Tak, C. W. Johnson, W. Y. Ho, F. Wu, M. Sauty et al., Phys. Rev. Applied 20, 064045 (2023)
[4] Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM), W. Y. Ho, C. W. Johnson, T. Tak, M. Sauty et al., Appl. Phys. Letters 123, 031101 (2023)
[3] Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces, N. Alyabyeva, J. Ding, M. Sauty et al., Phys. Status Solidi B 2200356 (2022)
[2] Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy, M. Sauty et al., Phys. Status Solidi B 2200365 (2022)
[1] Localization effect in photoelectron transport induced by alloy disorder in nitride semiconductor compounds, M. Sauty et al., Phys. Rev. Letters 129, 216602 (2022)
Financements
- 2026 – ICARE – Imaging carrier transport and recombination in III-nitride devices, ANR JCJC
- 2026 – STELLAR – Scanning Tunneling ElectroLuminescence of assembled molecuLAR networks, PSiNano, Paris-Saclay
- 2025 – Thèse CFR, CEA – Electronic processes in nitride LEDs: interplay between spatial heterogeneities and efficiencies
- 2024 – MiSpeLED – Micro-Spectroscopie des LED nitrures, PhOM, Graduate School de Physique, Université Paris-Saclay