Using different techniques of investigation (AES, LEED, STM, HR-TEM, EELS and PES), we have developed an original process, which consists to grow aluminium oxide layer by layer. This procedure so-called Atomic Layer Deposition and Oxidation (ALDO) allows to get an artificial oxide film perfectly homogeneous in depth and chemical composition as well. Several properties like gap measurement, stoichiometry, surface morphology and electrons transport let us think this oxide could be in good agreement with microelectronics applications (Magnetic Tunnel Junction and Magnetic memories).
CINAM – CNRS, Campus de Luminy, Marseille