Graphene, a two-dimensional material composed of carbon atoms arranged in hexagonal lattice, has outstanding physical and chemical properties, i.e. its exceptional electronic mobility. This material is thus promising for many applications in the future. However, if chemical vapour deposition (CVD) is a very promising method for large-scale graphene growth , it is still very challenging to control graphene characteristics.
Our objective is both to develop graphene growth by CVD at atmospheric pressure and moderate temperature (600°C / 850°C) on cobalt and to analyse grown graphene with complementary techniques to determine its physical, chemical and structural characteristics.
A study of the influence of different synthesis parameters on graphene characteristics (number of layer, coverage, defect and crystallite size) has been achieved. By combining the use of commercial cobalt foils with growth temperature of 850°C, a high cooling rate (100°C/min) and a low carbon supply, a continuous graphene film of three layers has been synthesized.
Thesis related to the subject: Olivier Duigou (2015)
