Fonction
Permanent Researcher at Commissariat à l’Énergie Atomique et aux Énergies Alternatives CEA.
Research fields
- Opto-electronic properties of nitride semi-conductor materials and devices
- Localization of waves in disorder media
Experimental techniques
- LEEM/PEEM/EEM – Low Energy Electron Microscopy, PhotoEmission Electron Microscopy, ElectroEmission Microscopy
- STL – Scanning Tunneling electroLuminescence
- Transient absorption spectroscopy and microscopy
CV
2023 –
CEA Researcher
2023
Post-doctorate researcher, Cavendish Laboratory, Cambridge University, UK, Prof. Akshay Rao’s team
2019 – 2022
PhD thesis, Laboratoire de Physique de la Matière Condensée (PMC), École polytechnique, directed by Dr. Jacques Peretti and Prof. Claude Weisbuch
“Study of the impact of alloy disorder on the electronic and optical properties of nitride semiconductor compounds and of their heterostructures”.
2016 – 2019
Master ICFP, Condensed Matter Physics, ENS Paris
- M1 internship (6 months), LBNL, Berkeley, USA, directed by Dr. Andreas Schmid
- M2 internship (4 months), PMC, École Polytechnique, directed by Dr. Jacques Peretti
2017 – 2018
Agrégation de Physique-Chimie option Physique, rang 3/72
2015 – 2016
Bachelor in Fundamental Physics, ENS Paris
2015
École Normale Supérieure (ENS), Paris, fonctionnaire-stagiaire
Scientific publications
[8] Observation of quasibound states in open quantum wells of cesiated 𝑝-doped GaN surfaces, M. Sauty et al., Phys. Rev. B 113, L081301 (2026)
[7] Molecular Engineering of Interlayer Exciton Delocalization in 2D Perovskites, Y. Boeije, F. Lie, M. Dubajić, E. Garip, A. Maufort, R.-I. Biega, S. Lenaers, M. Sauty et al., J. Am. Chem. Soc. 147 (35), 31541-31557 (2025)
[6] Investigation of the cesium activation of GaN photocathodes by low-energy
electron microscopy, M. Sauty et al., Phys. Rev. Applied 22, 034005 (2024)
[5] Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy, T. Tak, C. W. Johnson, W. Y. Ho, F. Wu, M. Sauty et al., Phys. Rev. Applied 20, 064045 (2023)
[4] Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM), W. Y. Ho, C. W. Johnson, T. Tak, M. Sauty et al., Appl. Phys. Letters 123, 031101 (2023)
[3] Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces, N. Alyabyeva, J. Ding, M. Sauty et al., Phys. Status Solidi B 2200356 (2022)
[2] Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy, M. Sauty et al., Phys. Status Solidi B 2200365 (2022)
[1] Localization effect in photoelectron transport induced by alloy disorder in nitride semiconductor compounds, M. Sauty et al., Phys. Rev. Letters 129, 216602 (2022)
Fundings
- 2026 – ICARE – Imaging carrier transport and recombination in III-nitride devices, ANR JCJC
- 2026 – STELLAR – Scanning Tunneling ElectroLuminescence of assembled molecuLAR networks, PSiNano, Paris-Saclay
- 2025 – Thesis funding CFR, CEA – Electronic processes in nitride LEDs: interplay between spatial heterogeneities and efficiencies
- 2024 – MiSpeLED – Micro-Spectroscopy of nitride LEDs, PhOM, Graduate School de Physique, Université Paris-Saclay