Thesis
Magneto-ionic gating of magnetic tunnel junctions for neuromorphic applications
Emerging materials and processes for nanotechnologies and microelectronics
Solid state physics, surfaces and interfaces
Magneto-ionics is an emerging field that offers great potential for reducing power consumption in spintronics memory applications through non-volatile control of magnetic properties through gating. By combining the concept of voltage-controlled ionic motion from memristor technologies, typically used in neuromorphic applications, with spintronics, this field also provides a unique opportunity to create a new generation of neuromorphic functionalities based on spintronics devices.
The PhD will be an experimental research project focused on the implementation of magneto-ionic gating schemes in magnetic tunnel junction’s spintronics devices. The ultimate goal of the project is to obtain reliable and non-volatile gate-control over magnetisation switching in three-terminal magnetic tunnel junctions.
One major challenge remains ahead for the use of magneto-ionics in practical applications, its integration into magnetic tunnel junctions (MTJ), the building blocks of magnetic memory architectures. This will not only unlock the dynamic control of switching fields/currents in magnetic tunnel junctions to reduce power consumption, but also allow for the control of stochasticity, which has important implications in probabilistic computing.
The PhD will be an experimental research project focused on the implementation of magneto-ionic gating schemes in magnetic tunnel junction’s spintronics devices. The ultimate goal of the project is to obtain reliable and non-volatile gate-control over magnetisation switching in three-terminal magnetic tunnel junctions.
One major challenge remains ahead for the use of magneto-ionics in practical applications, its integration into magnetic tunnel junctions (MTJ), the building blocks of magnetic memory architectures. This will not only unlock the dynamic control of switching fields/currents in magnetic tunnel junctions to reduce power consumption, but also allow for the control of stochasticity, which has important implications in probabilistic computing.
SL-DRF-25-0477
M2 ou école d’ingénieur en physique du solide/nanophysique
October 1 2025
Paris-Saclay
Physique et Ingénierie: électrons, photons et sciences du vivant (EOBE)
Saclay
CEA
Direction de la Recherche Fondamentale
Institut rayonnement et matière de Saclay
Service de Physique de l’Etat Condensé
Laboratoire Nano-Magnétisme et Oxydes