Thesis

Magneto-ionic gating of magnetic tunnel junctions for neuromorphic applications

Emerging materials and processes for nanotechnologies and microelectronics
Solid state physics, surfaces and interfaces
Magneto-ionics is an emerging field that offers great potential for reducing power consumption in spintronics memory applications through non-volatile control of magnetic properties through gating. By combining the concept of voltage-controlled ionic motion from memristor technologies, typically used in neuromorphic applications, with spintronics, this field also provides a unique opportunity to create a new generation of neuromorphic functionalities based on spintronics devices.

The PhD will be an experimental research project focused on the implementation of magneto-ionic gating schemes in magnetic tunnel junction’s spintronics devices. The ultimate goal of the project is to obtain reliable and non-volatile gate-control over magnetisation switching in three-terminal magnetic tunnel junctions.
One major challenge remains ahead for the use of magneto-ionics in practical applications, its integration into magnetic tunnel junctions (MTJ), the building blocks of magnetic memory architectures. This will not only unlock the dynamic control of switching fields/currents in magnetic tunnel junctions to reduce power consumption, but also allow for the control of stochasticity, which has important implications in probabilistic computing.
SL-DRF-25-0477
M2 ou école d’ingénieur en physique du solide/nanophysique
October 1 2025
Paris-Saclay
Physique et Ingénierie: électrons, photons et sciences du vivant (EOBE)
Saclay
CEA
Direction de la Recherche Fondamentale
Institut rayonnement et matière de Saclay
Service de Physique de l’Etat Condensé
Laboratoire Nano-Magnétisme et Oxydes
CEA
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C2N Centre for Nanoscience and Nanotechnology
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