Experimental and computer simulation methods are used to study defects, irradiation behavior, and thermal recovery processes in silicon carbide (SiC). Simulations of energetic C and Si collision cascades indicate that single interstitials, vacancies, antisite defects, and small defect clusters are produced. For Au recoils, amorphous clusters are produced directly within 25% of the cascades. Damage accumulation from cascade overlap has been simulated, and the results are in good agreement with experimental data. Simulations of close-pair recombination indicate that the activation energies for recombination of most close pairs range from 0.24 to 0.38 eV. Several dynamic and thermal recovery stages are observed experimentally, which are consistent with the spectrum of activation energies determined from simulations of defect migration and epitaxial recrystallization.
Pacific Northwest National Laboratory