Magneto-ionic gating in magnetic tunnel junctions

Summary

Magneto-ionics is an emerging field that offers great potential for reducing power consumption in spintronics memory applications through non-volatile control of magnetic properties through gating. By combining the concept of voltage-controlled ionic motion from memristor technologies, typically used in neuromorphic applications, with spintronics, this field also provides a unique opportunity to create a new generation of neuromorphic functionalities based on spintronics devices.

The PhD will be an experimental research project focused on the implementation of magneto-ionic gating schemes in magnetic tunnel junction’s spintronics devices. The ultimate goal of the project is to obtain reliable and non-volatile gate-control over magnetisation switching in three-terminal magnetic tunnel junctions.

One major challenge remains ahead for the use of magneto-ionics in practical applications, its integration into magnetic tunnel junctions (MTJ), the building blocks of magnetic memory architectures. This will not only unlock the dynamic control of switching fields/currents in magnetic tunnel junctions to reduce power consumption, but also allow for the control of stochasticity, which has important implications in probabilistic computing.