Researchers at the Institute of Electronics, Microelectronics and Nanotechnologie (IEMN / CNRS – Universités Lille 1 and Valenciennes, Institut supérieur de l’électronique et du numérique) and the Department of Solid-state Physics at the French Atomic Energy Agency (CEA), have succeeded in making transistors from carbon nanotubes on a silicon substrate. The transistors, which are mainly used as automatic switches, can reach cutoff frequencies of 30 GHz, which improves by a factor of 4 the previous record obtained by the same teams in August 2006. This result opens up new prospects for mainstream applications which require high operating frequencies. (More...
A. Le Louarn, F. Kapche, J.-M. Bethoux, H. Happy, and G. Dambrine, V. Derycke, P. Chenevier, N. Izard, M. F. Goffman, and J.-P. Bourgoin, Appl. Phys. Lett. 90, 233108, June 2007