Transistors based on carbon nanotubes get faster and faster !
Researchers at the Institute of Electronics, Microelectronics and Nanotechnologie (IEMN / CNRS – Universités Lille 1 and Valenciennes, Institut supérieur de l’électronique et du numérique) and the Department of Solid-state Physics at the French Atomic Energy Agency (CEA), have succeeded in making transistors from carbon nanotubes on a silicon substrate. The transistors, which are mainly used as automatic switches, can reach cutoff frequencies of 30 GHz, which improves by a factor of 4 the previous record obtained by the same teams in August 2006. This result opens up new prospects for mainstream applications which require high operating frequencies. (More...)
Reference :
A. Le Louarn, F. Kapche, J.-M. Bethoux, H. Happy, and G. Dambrine, V. Derycke, P. Chenevier, N. Izard, M. F. Goffman, and J.-P. Bourgoin, Appl. Phys. Lett. 90, 233108, June 2007.
V. Derycke, 2007-08-28 00:00:00
