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Effect of gamma-ray irradiation on ferroelectric, hafnia-based, non-volatile memory for use in extreme environments
LENSIS : Solid state physics, surfaces and interfacesParis-Saclay Physique en Île-de-France (EDPIF) SaclayThe emergence of hafnia-based ferroelectric (FE) memories has opened a new paradigm for ultra-low-power edge computing. Hafnia is fully compatible with CMOS technology and is ultra low-power—three…



