The molecular beam epitaxy technique (MBE) was developed initially for the crystalline growth of the semiconductors. It is an ultra-high vacuum (P < 10-6 mbar) technology based on the sequential evaporation of the elementary components placed in Knudsen effusion cells. One of the advantages of this method rests on the control of the growth in real time thanks to the in situ use of the high energy electron diffraction in grazing incidence (RHEED).