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Transport measurements
A phenomenon of transport is due to a force whose origin can be varied (electric or magnetic field, gradient of concentration, pressure etc...). Under the heading "transport measurements" are gathered various associated measurement techniques which can be flux measurements (heat, particles, electrical current, etc...), or statistical methods. 
#492 - Last update : 07/19 2005
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Fe3O4 is a very attractive material for applications involving spin-dependent transport at room temperature as this ferromagnetic oxide has a high Curie temperature (Tc= 858 K) and is predicted to be half-metallic. However, the potential applications of Fe3O4 layers in devices relies on the assumption that the magnetic and transport properties in the thin films are similar to those in the bulk material.
DSM/DRECAM/SPCSI - Oxides group
Spin electronics is a new field of research which associates two domains of physics: magnetism and electronics. In the last decade, effects related to spin dependent transport like giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic heterostructures have stimulated a considerable interest. These physical properties can be exploited in a variety of advanced devices such as highly sensitive magnetic sensors (e.g.


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