Sujet de stage / Master 2 Internship

The aim of the internship is to develop a single ion implantation technique in silicon (Si), quartz (SiO2) or graphite (HOPG), correlated with time-of-flight detection measurements.

The elaboration and analysis of nano-structured materials by ion beams are widely used techniques in most fields related to nanosciences and nanotechnologies such as microelectronics components, nano-photonics, nano-materials, nano-magnetism, spin electronics and quantronics. Localized doping is mainly based on ion implantation, either by using masks or focused ion beams.

Single implantation, as a means of fine control of the inclusion of impurities (e.g. nitrogen in diamond), is also used in the generation of single photon sources. This technique, extended to the fabrication of arrays of emitting centers (colored centers), is crucial for future applications as spin-coupled quantum devices.

We propose in this internship to develop the technique of single ion implantation correlated to time-of-flight detection measurements. The implantations will be done in a first step on model materials sensitive to heavy ion impacts (Bismuth and Xenon) such as silicon (Si), quartz (SiO2) or graphite (HOPG). The near field characterizations (AFM, STM, C-AFM, KPFM) will be done in-situ at the PELIICAEN device. Then in a second time on diamond samples for the creation of matrices of NV centers and characterized in super-resolved optical microscopy STED.

All this work is strongly supported by various calls for projects, including the Quantum Plan, Europe and the Normandy Region, and a thesis proposal could be considered.