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Univ. Paris-Saclay

Sujet de stage / Master 2 Internship

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Study of the electronic and optoelectronic properties of two-dimensional semiconductor nanomaterials

Contact: DERYCKE Vincent, , vincent.derycke@cea.fr, +33 1 69 08 55 65
Summary:
The main mission of the student will be to integrate in electronic and optoelectronic devices, two-dimensional semiconductor materials (thickness <1 nm) synthesized in the laboratory and to measure their performances. These materials are monolayers of MoS2, WS2 and/or SnS2 synthesized by CVD and analyzed by different techniques (AFM, SEM, XPS, Raman, Photoluminescence). The devices are mainly field-effect transistors based on functionalized 2D materials or based on combinations of several 2D materials.
Possibility of continuation in PhD: Non
Deadline for application:23/03/2023

Full description:
This internship in material science and nanoelectronics is part of a larger collaborative project aimed at studying the performances of photo-detectors based on two-dimensional semiconductor nanomaterials such as transition metal dichalcogenides (typically atomic monolayers of MoS2, WS2, SnS2 …) and assemblies of these nanomaterials in the form of controlled stacks called van des Waals heterostructures. In this context, the student recruited at CEA Paris-Saclay/NIMBE/LICSEN will have the initial mission of contributing to the synthesis by CVD (chemical vapor deposition) of 2D semiconductors (thickness <1 nm) and to characterize in detail their structural properties by different techniques (AFM, SEM, XPS, Raman, etc.). The heart of the internship mainly concerns the production of field effect transistors based on these 2D materials and the measurement of their electrical and optoelectronic performances. For this, the intern will use micro/nano-fabrication techniques (electronic and optical lithography, etc.) and an optoelectronic measurement setup dedicated to the project. The laboratory already has a solid experience in the synthesis of MoS2 and the study of transistors based on nanomaterials, which guarantees a rapid start of the internship.

Skills at master's level in the field of nanosciences are essential as well as, of course, a very high level of motivation and great rigor. A level of English allowing the reading of scientific articles is required.
Technics/methods used during the internship:
e-beam lithography, electrical measurements, AFM, SEM, photoluminescence

Laboratory
Tutor of the internship

 

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