Laboratoire Léon Brillouin
UMR12 CEA-CNRS, Bât. 563 CEA Saclay
91191 Gif sur Yvette Cedex, France
+33-169085241 llb-sec@cea.fr
PhD thesis of: Hugo CASADEMONT
Contacts: Bruno JOUSSELME & Vincent DERYCKE
Dielectric films with nanometer thickness play a central role in the performances of field effect transistors (FETs). In this article, a new class of organic gate dielectric based on the electrochemical grafting of diazonium salts on metallic electrodes is investigated. The versatile diazonium salt strategy is a local and room-temperature process that provides robustness and performances. Moreover, this process produces ultrathin (4-8 nm) and smooth films. To prove their efficiency as gate dielectric, they were integrated in MoS2-FETs gate stacks. The devices display excellent switching behavior for reduced gate bias swing (down to 1V) and suppressed hysteresis thank to the highly hydrophobic nature of the fluorinated grafted film. Furthermore, the devices exhibit steep subthreshold slopes (as low as 110 mV/decade), demonstrating excellent gate coupling.
We are presently extending this study to CVD-based monolayer MoS2 and to flexible devices.
Référence :
[1] Electrografted Fluorinated Organic Ultrathin Film as Efficient Gate Dielectric in MoS2 Transistors
H. Casademont, L. Fillaud, X. Lefevre, B. Jousselme, V. Derycke, J. Phys. Chem. C (2016), in press - link
• Électronique et optique du futur › Matériaux pour l'électronique et l'optique - Electronique organique et moléculaire
• Laboratoire d'Innovation en Chimie des Surfaces et Nanosciences (LICSEN)