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Univ. Paris-Saclay
Ab initio Calculations of the Electronic Properties of CuIn(S,Se)2 and other Materials for Photovoltaic Applications
Julien Vidal
Vendredi 21/05/2010, 00:00
LSI - École Polytechnique Palaiseau, Institut Polytechnique de Paris (IPP), Palaiseau

Annonce sur le site de l'IRAMIS/LSI


My PhD discussion will deal with ab initio methods applied to CuIn(S,Se)2 with a view to photovoltaic applications. It will mainly focus on the relevance of these techniques depending on the physics at work. Advanced methods such as GW reveal the presence of a hidden compensating mechanism between lattice distortion and intrinsic defect concentration in CuIn(S,Se)2. Such phenomenon may explain the high efficiency obtained for photovoltaic cells based on Cu(In,Ga)S2 thin film absorbers.

Contact : Martine SOYER


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