| Centre
| | | | | | | webmail : intra-extra| Accès VPN| Accès IST | English
Univ. Paris-Saclay
Self-healing at grain boundaries in plasma-treated sp2 carbon
Xavier GLAD
Mercredi 05/02/2020, 10:30-12:00
SRMP Bât 520 p.109, CEA-Saclay

Extensively encountered in radiation damage studies for its role in fission and fusion reactors, sp2-carbon has gained a surge of interest this last decade owing to the exfoliation of monolayer graphene films in 2004. Nowadays, despite the absence of a large-scale production method, the synthesis of polycrystalline monolayer graphene is well-controlled using chemical vapour deposition. It has enabled numerous studies of ion-induced damage in 2D materials. Recently, a peculiar phenomenon has been evidenced in CVD-grown sheets under low-ion energy argon plasma irradiation: the self-healing of the graphene grain boundaries (GBs) [1]. While this has been theorized [2] and experimentally demonstrated [3] in 3D materials, this is the first occurrence of such process in 2D materials.

This seminar introduces the discovery of this phenomenon in graphene using a new hyperspectral Raman spectroscopy system [4]. The plasma environment and its 12-eV argon ion irradiation lead to a high density of Frenkel pairs during the treatment. The resilience of the GBs, evidenced by the Raman mappings (Fig. 1 [1]), is explained by their role as defect sinks which results in preferential adatom-vacancy annihilation in their vicinity. The phenomenon is further described as a function of the different plasma irradiation conditions.

In the last part of the talk, a few interesting features arising from the graphene GB resilience under plasma irradiation are discussed. For example, this phenomenon leads to the formation of hexagonal nano-pyramids during argon plasma treatment of graphite substrates (Fig. 2 [5]). Whilst adatoms/interstitials instigate the synthesis of these new structures, they might also feed the formation of the loops zipping the basal planes observed along the pyramidal facets (Fig. 3 [5]). Additionally, the boundaries plays an important role in graphene functionalization: one may observe different doping behaviours when treated in nitrogen or diborane plasmas; N-incorporation is inhibited at GBs in the former while B-incorporation is favoured at the domain boundaries in the latter.

  • [1] Glad & Vinchon et al. (2020) “Self-Healing at Grain boundaries in plasma-treated graphene” currently under major revision in Nature Materials
  • [2] Bai et al. (2010) “Efficient annealing of radiation damage near grain boundaries via interstitial emission” Science 327
  • [3] Zhang et al. (2018) “Radiation damage in nanostructured materials” Progress in Materials Science 96
  • [4] Gaufrès et al. (2018) “Hyperspectral Raman imaging using Bragg tunable filters of graphene and other low‐dimensional materials” Journal of Raman Spectroscopy 49
  • [5] Glad et al. (2014) “Plasma synthesis of hexagonal-pyramidal graphite hillocks” Carbon 76
Contact : Luc BARBIER


Séminaire SRMP - Informations pratiques

Entrée sur le site du CEA de Saclay pour les séminaires SRMP

Afin de pouvoir entrer sur le site du CEA de Saclay veuillez adresser les données personnelles suivantes par courriel à :
(secrétariat) un avis d’entrée vous sera alors délivré :


Nom :

Prénom :

Date et lieu de naissance :

Nationalité :

Nom de l'employeur :


Ces informations doivent être envoyées au mieux deux jours avant la date du séminaire.>

Lors de votre venue vous devez vous présenter avec une carte d'identité ou un passeport en cours de validité. L'entrée sur le site se fait par l'entrée principale ou porte Nord (suivre le lien ci-dessous), un badge vous y sera remis. Demandez à l'accueil le Bât.520, ils vous renseigneront.
Les séminaires se déroulent au Bât. 520, pièce 109 (1er étage).
En cas de problème vous pouvez contacter le secrétariat au : 01 69 08 51 67

Formalities for entering the CEA Saclay site for SRMP seminars

To enter in CEA Saclay you need to send the following personal data to   (secretariat):

Informations utiles/Practical informations - Contact:

Informations:  Access to the CEA Saclay




Last Name :

First Name :

Place and date of birth :

Nationality :

Employer Name :

These informations must be preferably sent at least two days before the seminar date.


When you come you must have a valid ID card or passport with you.

The entrance in CEA Saclay is through the main entrance or north entrance (see link below), a pass will be delivered. Ask at the “accueil” the path for the building 520. SRMP seminars take place in room 109 (first floor).

Any questions/troubles do not hesitate to contact our secretariat: 33 (0)1 01 69 08 51 67.


#38 - Mise à jour : 11/02/2013


Retour en haut