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Univ. Paris-Saclay
Shot noise in magnetic tunnel junctions
Tomonori Arakawa
Institute for Chemical Research, Kyoto University
Jeudi 03/11/2011, 14:30
SPEC Salle Itzykson, Bât.774, Orme des Merisiers

   The resistance of a magnetic tunnel junction (MTJ) depends on the
relative magnetization of the ferromagnetic layers such that it is low
in the parallel (P) configuration while it is high in the anti-parallel
(AP) one. The coherent tunneling is theoretically predicted to play a
central role in MTJs with the crystalline MgO barriers.
   In this presentation, we report the shot noise measurement in
well-crystalline CoFeB/MgO/CoFeB-based MTJs with the increased
experimental accuracy. We observed reduced Fano factor (F~0.91) in P
configuration, while F in AP configuration was close to 1. Moreover,
this reduction is independent to the sample temperature and the
magnetic field.

Contact : Patrice BERTET


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