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Univ. Paris-Saclay
Efficient organic solar cells: in situ time-resolved structural/morphological monitoring approach to stability and durability issues
Barbara Paci
I.SM.- C.N.R.,Via Fosso del Cavaliere 100. 00133 Rome, Italy
Jeudi 20/05/2010, 11:00
SPEC Bât 466 p.111 (1er ét.), CEA-Saclay

The crucial requirement, in the development of organic electronics, of devices structural/morphological stability and durability is addressed.

Organic solar cells, although much less efficient than silicon cells, exhibit a unique combination of interesting properties, including: low cost, flexibility and the ability to cover large surfaces. Ultrafast photoinduced electron transfer from a donor to an acceptor material provided a molecular approach to high efficiency photovoltaic conversion, leading to the development of bulk heterojunction organic solar cell. In particular, the highest efficiencies have recently been reached using methanofullerene (acceptor) blended with poly(3-hexyl thiophene) as the donor. Nevertheless, further improvement of power conversion efficiency, stability and lifetime of such devices are the key-points to be addressed before commercial use can be considered.

First of all, the degradation over time of the organic film, the active component of the cell, is of particular concern. Furthermore, possible reaction or diffusion processes that may well occur at the interfaces between various layers constituting these 'sandwich-like' systems can be detrimental.

In this framework, a central role is played by the adoption of unconventional characterization techniques, aiming to better understand the various mechanisms involved in the devices aging. Here, the possibilities offered by a joint in-situ Energy Dispersive X-ray Reflectometry/Diffratometry (EDXR/EDXD) and AFM setup are presented.  The results indicate that such cross monitoring is able to provide direct information on the structural and morphological changes accompanying exposure to light, allowing to detect the occurrence of bulk, interface and surface degradation phenomena and to correlate them to the device aging.

Contact : Daniel BONAMY


Séminaire SPCSI - Informations pratiques

Entrée sur le site du CEA de Saclay pour les séminaires SPCSI

Afin de pouvoir entrer sur le site du CEA de Saclay veuillez adresser les données personnelles suivantes par courriel à Christine Prigian et Catherine Julien (secrétariat) un avis d’entrée vous sera alors délivré:






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Ces informations doivent être envoyées au mieux deux jours avant la date du séminaire.

Lors de votre venue vous devez vous présenter avec une carte d'identité ou un passeport en cours de validité. L'entrée sur le site se fait par l'entrée principale ou porte Nord (suivre le lien ci-dessous), un badge vous y sera remis. Demandez à l'accueil le Bât.466, ils vous renseigneront.
Les séminaires se déroulent au Bât. 466, pièce 111 (1er étage).
En cas de problème vous pouvez contacter le secrétariat au : 01 69 08 65 32 /  40 12.

Formalities for entering the CEA Saclay site for SPCSI seminars



To enter in CEA Saclay you need to send the following personal data to Christine  PRIGIAN and Catherine Julien (secretariat):



Informations utiles/Practical informations - Contact

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Contact: Christine Prigian et Catherine Julien


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These informations must be preferably sent at least two days before the seminar date.


When you come you must have a valid ID card or passport with you.

The entrance in CEA Saclay is through the main entrance or north entrance (see link below), a pass will be delivered. Ask at the “accueil” the path for the building 466. SPCSI seminars take place in room 111 (first floor).

Any questions/troubles do not hesitate to contact our secretariat : 33 (0)1 69 08 65 32 /  40 12.

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