TMR sensors for brain imaging
|Contact: PANNETIER-LECOEUR Myriam, , firstname.lastname@example.org, +33 1 69 08 74 10|
Spin electronics, characterized by the modulation of charge transport by the state of electron polarization, has made it possible to develop magnetic memories and magnetic sensors, primarily in the read heads of hard disks, but also for magnetometry and the measurement of weak magnetic fields. The accessible fields are typically in the nanotesla range.
Thanks to a magnetic concentrator system developed in the laboratory, allowing the magnetic flux to be focused on a spin electronics sensor, it is possible to reduce the field detection limit by several orders of magnitude.
In this project, tunnel magnetoresistance (TMR) sensors will be combined with a superconducting loop to achieve detection levels lower than femtotesla (10-15T). Thus, these sensors can be used both in the health sector for low field magnetic imaging and in communications for the detection of very low intensity electromagnetic fields.
|Possibility of continuation in PhD: Oui|
|Deadline for application:28/02/2020 |
|Full description: |
During the internship, mixed TMR-concentration loop sensors will be manufactured using lithography techniques. The devices thus obtained will be characterized through the ultra-low noise platform of the SPEC (magnetically shielded room, magnetotransport and noise characterization) at the working temperature of the sensor. The device will then be integrated into a portable system that interfaces with the low field MRI system currently installed in Neurospin for low field brain imaging.
The internship will cover microfabrication, modelling and testing aspects, the precise distribution of which will depend on the previous training and the duration of the internship.
This project is part of the ANR "AdvTMR" project and may lead to a thesis.
|Technics/methods used during the internship: |
Physical measurements - Magnetic transport - Noise measurements - Microfabrication
|Tutor of the internship |