Service de Physique de l'Etat Condensé

Oxitronics : taming transition metal oxides interfaces for spintronics
Marc Gabay - Laboratoire de Physique des Solides d'Orsay
Mercredi 06/02/2019, 11h00-12h00
SPEC Salle Itzykson, Bât.774, Orme des Merisiers

Active research is being pursued for alternatives to our current silicon technology and transition metal oxides heterostructures are valuable in this respect since they can now be engineered in a Lego-like fashion. It has been shown that their interfaces are not only conducting but that they also exhibit ferroelectricity, superconductivity, gate tunable transport, large thermoelectric effect, large spin-orbit contributions, possibly ferromagnetism as well. Given this multifunctionality, oxide electronics (we coined it "oxitronics") appears to be a promising lead for new types of components, notably in regards to spintronics.
We shall focus on a particular oxide based heterostructure, LaAlO3-SrTiO3 (LAO-STO). Experiments reveal that a quasi two-dimensional metallic sheet that evolves at low temperature into a superconducting state may form on the STO side, close to the interface. Charge transport can be controlled by applying gate voltages. Strain and spin also control the transport of charge; the possibility to tune the strength of the interfacial spin-orbit interaction (Rashba) is promising in this respect. The existence of a two-dimensional topological metallic state was theoretically proposed in this system and fingerprints of this regime have recently been experimentally revealed through a giant spin to charge conversion (inverse Rashba-Edelstein effect).

Références:
M. Vivek et al., Phys. Rev. B 95, 165117 (2017)
A Spin-Orbit Playground: Surfaces and Interfaces of Transition Metal Oxides
S Gariglio, A D Caviglia, J-M Triscone, M Gabay, Reports of Progress in Physics, 82, 012501(2019)


A coffee break will be served at 11h00.
 


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