Nanoscale surface morphology and rectifying behavior of a bulk single-crystal organic
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Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single-Crystal Organic Semiconductor

Single-crystal organic semiconductors represent perfect systems not only for studying basic science associated with transport of polaronic charge carriers but also for investigating the upper limits of mobilities in thin-film organic devices for flexible displays and other emerging electronic applications. The field-effect transistor provides an important tool to explore the transport of field-induced charge carriers at the surface of organic semiconductors.[1] Special care, however, must be taken during the device fabrication to avoid degradation of the critical interface between the semiconductor and the dielectric.[2,3] High material purity, excellent crystalline quality, and nanoscale morphological smoothness are among the characteristics of this interface that are crucial to obtaining high-performance devices [4,5] and test structures for studies of intrinsic phenomena.

Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single-Crystal Organic Semiconductor
E. Menard, A. Marchenko, V. Podzorov, M. E. Gershenson, D. Fichou, J. A. Rogers, Advanced Materials (2006)

 

Maj : 09/06/2014 (664)

 

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