The silicon carbide (SiC) is an interesting semiconductor for electronics because of its capacity to be functioned at high temperature. Another interesting property of this materials is the capacity that on its surface under certain conditions to organize itself in formed atomic dimer lines of which the length can exceed the micron. Spacing can be adjusted by a heat treatment. Thus it is possible to realize a super-lattice of atomic lines massively parallel. These highly regular structures could be used as support to build nanostructures (Spcsi- Univ Paris XI).