Magnetite is a very attractive oxide for applications in spin electronics devices because this material has been predicted to be an half-metal. In addition the high Curie temperature of this ferrimagnetic compound (Tc = 860 K) makes it possible to hope that the half-metal property persists at room temperature. However, the values of tunnel magneto-resistance (TMR) reported to date are very low at room temperature, except for the junctions using an amorphous alumina barrier for which TMR effects of about 10 % were obtained. The deposition of the alumina barrier is a critical stage, since aluminium has a very strong reactivity with surrounding oxygen. The presence of an alumina layer generally involves the formation of a phase reduced to the Fe3O4/Al2O3 interface, and thus the disappearance of the half-metal behavior of Fe3O4 in the full-course last. In this framework, we carried out a study allowing on the one hand to carry out the epitaxial growth of an alumina layer of some nanometers thickness on magnetite and on the other hand to control the stoichiometry of the Fe3O4/Al2O3 interface. The Fe3O4 (15 nm)/Al2O3 (1.5 nm) bilayers were carried out by MBE. The good epitaxy of the alumina barrier on Fe3O4 is confirmed by the high resolution transmision electron microscopy (HRTEM) picture, showing the crystalline character of alumina deposited.