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Univ. Paris-Saclay
Epitaxial graphene: designing a new electronics material
Prof. Walt A. de Heer
Georgia Institute of Technology
Vendredi 19/12/2008, 11:00
SPEC Bât 466 p.111 (1er ét.), CEA-Saclay
Since 2001, research at Georgia Tech with various collaborators has demonstrated the extraordinary transport properties of epitaxial graphene, which is graphene that is grown on single crystal silicon carbide (SiC). Monolayer graphene can be grown on the silicon face of hexagonal SiC. Multilayered epitaxial graphene (MEG), consists of up to 100 graphene sheets, grows on the carbon face of SiC. MEG. Surprisingly, its properties correspond to those of monolayer graphene rather than to those of graphite. The MEG structure has been extensively studied using a variety of probes, including STM, STS, AFM, LEED, XRD, IR spectroscopy. For example, its band structure is defined by a "Dirac cone"; it exhibits a non-trivial Berry's phase; weak anti-localization; and quantum confinement effects. Long (µm) phase coherence lengths have been measured. Transport properties confirm that the graphene chiral nature of the carriers in the material, which distinguishes it from Bernal graphite. Landau level spectroscopy further exhibits record-breaking room temperature mobilities and well resolved Landau levels well below 1 T, indicating extremely low carrier densities, good homogeneity of the material and very weak electron-phonon coupling. Moreover MEG has recently successfully been converted in situ, to multilayered graphene oxide which is a semiconducting form of MEG. All these properties indicate that epitaxial graphene is an ideal platform for graphene-based electronics as well as for fundamental Dirac electron physics. Recent results on large scale patterning of FETs will also be presented.
Contact : Daniel BONAMY

 

Séminaire SPCSI - Informations pratiques

Entrée sur le site du CEA de Saclay pour les séminaires SPCSI

Afin de pouvoir entrer sur le site du CEA de Saclay veuillez adresser les données personnelles suivantes par courriel à Christine Prigian et Catherine Julien (secrétariat) un avis d’entrée vous sera alors délivré:

 

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Prénom:

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Nationalité:

Nom de l'employeur:

 

Ces informations doivent être envoyées au mieux deux jours avant la date du séminaire.

Lors de votre venue vous devez vous présenter avec une carte d'identité ou un passeport en cours de validité. L'entrée sur le site se fait par l'entrée principale ou porte Nord (suivre le lien ci-dessous), un badge vous y sera remis. Demandez à l'accueil le Bât.466, ils vous renseigneront.
Les séminaires se déroulent au Bât. 466, pièce 111 (1er étage).
En cas de problème vous pouvez contacter le secrétariat au : 01 69 08 65 32 /  40 12.


Formalities for entering the CEA Saclay site for SPCSI seminars

 

 

To enter in CEA Saclay you need to send the following personal data to Christine  PRIGIAN and Catherine Julien (secretariat):

 

 

Informations utiles/Practical informations - Contact

Informations:  Access



 

Contact: Christine Prigian et Catherine Julien

 

Last Name :

First Name :

Place and date of birth :

Nationality :

Employer Name :

These informations must be preferably sent at least two days before the seminar date.

 

When you come you must have a valid ID card or passport with you.

The entrance in CEA Saclay is through the main entrance or north entrance (see link below), a pass will be delivered. Ask at the “accueil” the path for the building 466. SPCSI seminars take place in room 111 (first floor).

Any questions/troubles do not hesitate to contact our secretariat : 33 (0)1 69 08 65 32 /  40 12.

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